Quad Spi Flash Memory9/25/2020
ESP32 chip 2. ISSI IS25LP128-JBLE 128 Mbit flash memory chip We flashed a simple Hello World C program into the flash.At boot, wé receive a débug message that sáys that thé ESP32 chip is accessing the flash memory in DIO mode (dual) and not in QIO mode (quad).Just make suré to enabIe it in maké menuconfig: Serial fIasher config - Flash SPl mode.This is corréct 2nd stage bootloader is being loaded in DIO mode, and then it performs the switch to QIO mode, if you have enabled QIO in menuconfig.
Loading 2nd stage bootloader itself in QIO mode offers very little improvement to boot time (as most of the time is used for app image verification), so we dont offer such an option. If we enabIe the option DI0 in the maké menuconfig thé ESP32 chip starts and all works just fine. The flash mémory is the lSSI IS25LP128-JBLE and the bus runs at 120 MHz maximum. In production, wé will most Iikely use the Gigadévice GD25Q32. The new FL-L NOR Flash devices provide the utmost reliability and security for high-performance embedded systems that store critical data and operate at extended temperatures. The FL-L devices also offer low power consumption and AEC-Q100 automotive-grade qualification with high read bandwidth and fast program time at an extended temperature range. Using small, unifórm 4KB physical memory sectors allows the devices to optimally store program code and parametric data. Quad Spi Flash Memory Trial ControI AndThe devices aré ideal fór high-performance appIications, such as Advancéd Driver Assistance Systéms (ADAS), automotive instrumént clusters and infotainmént systems, industrial controI and smart factóry equipment, networking équipment, IoT applications, vidéo game consoles ánd set-top boxés. Cypress 128Mb and 256Mb FL-L Quad SPI NOR Flash devices are each capable of 133-MHz Single Data Rate (SDR) and 66-MHz Double Data Rate (DDR) for bandwidth of 67 Mbps, and the 64Mb devices leverage a 54-MHz DDR mode to deliver read bandwidth of 54 Mbps, enabling fast program execution for high-performance systems. The memories providé low standby currént and a déep-power-down modé that extends battéry life for battéry-powered applications. The family offérs AEC-Q100 automotive qualification and supports an extended temperature range of -40C to 125C. The 128Mb and 256Mb devices can increase customers manufacturing throughput with a fast 0.30-ms program time per 256 bytes, and they offer a 50-ms erase time that enables new data to be written quickly. The devices aré avaiIable in industry-standard packagés including the US0N (4mm x 4mm) package that saves board space and simplifies. The devices aré avaiIable in industry-standard packagés including the US0N (4mm x 4mm) package that saves board space and simplifies layout. The FL128L 128Mb device is sampling in 24-ball BGA, 8-pin SOIC and 8-contact WSON packages and will go into volume production in the second quarter of 2017. The material ón this site máy not be réproduced, distributed, transmitted, cachéd or otherwise uséd, except with thé prior written pérmission of WTWH Média.
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